A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam

• Published in: Instruments and experimental techniques (New York) Vol. 61; no. 6; pp. 769 - 771
• Main Authors: Hrubčín, L., Gurov, Yu. B., Zaťko, B., Ivanov, O. M., Mitrofanov, S. V., Rozov, S. V., Sandukovsky, V. G., Semin, V. A., Skuratov, V. A.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-11-2018; Springer Nature B.V
• Subjects: Cyclotrons; Detectors; Electrical Engineering; Fluxes; Ion beams; Measurement Science and Instrumentation; Nuclear Experimental Technique; Nuclear reactions; Nuclear research; Physical Chemistry; Physics; Physics and Astronomy; Sensors; Silicon carbide; Xenon; Flerov Laboratory; Volt-farad Characteristics; Integral Flux; Radiation Hardness; Silicon Carbide Detectors
• ISSN: 0020-4412; 1608-3180
• DOI: 10.1134/S0020441218060192

The properties of silicon (Si) and silicon carbide (4Н-SiC) detectors after their exposure to different integral fluxes of xenon (Xe) ions are presented. The detectors were irradiated at the IC-100 cyclotron of the Flerov Laboratory of Nuclear Reactions at the Joint Institute for Nuclear Research. It is shown that the degradation of the spectroscopy characteristics of a SiC detector occurs at higher doses compared to a similar Si detector.