The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon

• Published in: Technical physics letters Vol. 43; no. 2; pp. 166 - 168
• Main Authors: Bilenko, D. I., Galushka, V. V., Zharkova, E. A., Sidorov, V. I., Terin, D. V., Khasina, E. I.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-02-2017; Springer Nature B.V
• Subjects: Aluminum; Classical and Continuum Physics; Electrical properties; Electrical resistivity; Fermi level; Food irradiation; Gamma rays; Irradiation; Physics; Physics and Astronomy; Silicon
• ISSN: 1063-7850; 1090-6533
• DOI: 10.1134/S1063785017020031

The effect of low exposure doses (5–40 kR) of gamma radiation on the electrical properties of structures based on a mesoporous silicon (SiMP) layer is investigated. It is demonstrated that the conductivity of the SiMP layer increases, the Fermi level shifts, and the trap density changes in gamma-irradiated Al/SiMP/
p
-Si/Al structures. Long-term stable switched-state memory in the region of the
I–V
curve hysteresis is revealed. This effect is controlled by the irradiation dose.