Electronic Structure of Doped Boron Nitride Nanotubes as Potential Catalysts of Photochemical Water Splitting
Semiconductors with band gap widths of 1.5–2.8 eV are used as catalysts for hydrogen production by photochemical water splitting. The electronic states of BN nanotubes doped with Group III–V nontransition elements have been studied by quantum-chemical methods. It has been found that nanotubes with a...
Saved in:
Published in: | Russian journal of inorganic chemistry Vol. 63; no. 9; pp. 1204 - 1210 |
---|---|
Main Authors: | , |
Format: | Journal Article |
Language: | English |
Published: |
Moscow
Pleiades Publishing
01-09-2018
Springer Nature B.V |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Semiconductors with band gap widths of 1.5–2.8 eV are used as catalysts for hydrogen production by photochemical water splitting. The electronic states of BN nanotubes doped with Group III–V nontransition elements have been studied by quantum-chemical methods. It has been found that nanotubes with a small excess of boron or with carbon atoms substituted for some boron atoms can be used as candidates for creation of such catalysts since they have optical absorption in this spectral range. |
---|---|
ISSN: | 0036-0236 1531-8613 |
DOI: | 10.1134/S0036023618090048 |