Origin of Degradation of the CaF2/BaF2 Buffer Layers on Si(111)
The growth temperature dependences of the capacitance–voltage characteristics and chemical stability of the CaF 2 /BaF 2 buffer layers formed on Si by molecular beam epitaxy have been investigated. Secondary ion mass spectrometry and X-ray photoelectron spectroscopy studies of the CaF 2 /Si interfac...
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| Published in: | Doklady. a journal of the Russian Academy of Sciences. Physics Vol. 65; no. 1; pp. 15 - 17 |
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| Language: | English |
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Pleiades Publishing
2020
Springer Nature B.V |
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| Abstract | The growth temperature dependences of the capacitance–voltage characteristics and chemical stability of the CaF
2
/BaF
2
buffer layers formed on Si by molecular beam epitaxy have been investigated. Secondary ion mass spectrometry and X-ray photoelectron spectroscopy studies of the CaF
2
/Si interface suggest that the observed variations can be caused by the enrichment of the Si surface layer with calcium. |
|---|---|
| AbstractList | The growth temperature dependences of the capacitance–voltage characteristics and chemical stability of the CaF2/BaF2 buffer layers formed on Si by molecular beam epitaxy have been investigated. Secondary ion mass spectrometry and X-ray photoelectron spectroscopy studies of the CaF2/Si interface suggest that the observed variations can be caused by the enrichment of the Si surface layer with calcium. The growth temperature dependences of the capacitance–voltage characteristics and chemical stability of the CaF 2 /BaF 2 buffer layers formed on Si by molecular beam epitaxy have been investigated. Secondary ion mass spectrometry and X-ray photoelectron spectroscopy studies of the CaF 2 /Si interface suggest that the observed variations can be caused by the enrichment of the Si surface layer with calcium. |
| Author | Suprun, S. P. Neizvestny, I. G. Tereshchenko, O. E. Ishchenko, D. V. Akhundov, I. O. |
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| Keywords | calcium fluoride on silicon adhesion interface epitaxy |
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| References | M. A. Olmstead, “Heteroepitaxy of Disparate Materials: from Chemisorption to Epitaxy in CaF2/Si(111),” in Thin Films: Heteroepitaxial Systems, Ed. by W.K. Liu and M.B. Santos, Singapore: World Scientific, 1999, vol. 15, Sec. 5, p. 211. BelenchukA.FedorovA.HuhtinenH.Thin Solid Films20003582772000TSF...358..277B10.1016/S0040-6090(99)00696-3 KarlssonU. O.HimpselF. J.MorarJ. F.J. Vac. Sci. Technol.19864111710.1116/1.583552 HiroseY.HorngS.KahnA.J. Vac. Sci. Technol. A1992109601992JVST...10..960H10.1116/1.577886 DavydovV. I.LoskutovaE. A.FefelovaI. I.Soviet Microelectronics198615257 KouvatsosD. N.StevieF. A.JaccodineR. J.J. Electrochem. Soc.1993140116010.1149/1.2056216 SuprunS. P.ShcheglovD. V.JETP Lett.2008883652008JETPL..88..365S10.1134/S0021364008180057 C. A. Lucas, D. Loretto, and G. C. L. Wong, Phys. Rev. 50 (19), 14340. HimpselF. J.HillebranchtF. U.HughesG.Appl. Phys. Lett.1986435961986ApPhL..48..596H10.1063/1.96478 PasqualiL.SuturinS. M.UlinV. P.Phys. Rev.20057204544810.1103/PhysRevB.72.045448 OlmsteadM. A.UhrbergI. G.BringansR. D.Phys. Rev.198635752610.1103/PhysRevB.35.7526 B.I. Boltaks, Diffuziya i tochechnye defekty v poluprovodnikakh (Diffusion and Point Defects in Semiconductors), Leningrad: Nauka, 1972. F. J. Himpsel (1182_CR11) 1986; 43 L. Pasquali (1182_CR3) 2005; 72 1182_CR8 V. I. Davydov (1182_CR9) 1986; 15 M. A. Olmstead (1182_CR2) 1986; 35 1182_CR4 1182_CR12 D. N. Kouvatsos (1182_CR10) 1993; 140 Y. Hirose (1182_CR6) 1992; 10 S. P. Suprun (1182_CR7) 2008; 88 A. Belenchuk (1182_CR1) 2000; 358 U. O. Karlsson (1182_CR5) 1986; 4 |
| References_xml | – volume: 140 start-page: 1160 year: 1993 ident: 1182_CR10 publication-title: J. Electrochem. Soc. doi: 10.1149/1.2056216 contributor: fullname: D. N. Kouvatsos – volume: 4 start-page: 1117 year: 1986 ident: 1182_CR5 publication-title: J. Vac. Sci. Technol. doi: 10.1116/1.583552 contributor: fullname: U. O. Karlsson – volume: 358 start-page: 277 year: 2000 ident: 1182_CR1 publication-title: Thin Solid Films doi: 10.1016/S0040-6090(99)00696-3 contributor: fullname: A. Belenchuk – volume: 72 start-page: 045448 year: 2005 ident: 1182_CR3 publication-title: Phys. Rev. doi: 10.1103/PhysRevB.72.045448 contributor: fullname: L. Pasquali – ident: 1182_CR12 doi: 10.1103/PhysRevB.50.14340 – volume: 35 start-page: 7526 year: 1986 ident: 1182_CR2 publication-title: Phys. Rev. doi: 10.1103/PhysRevB.35.7526 contributor: fullname: M. A. Olmstead – volume: 10 start-page: 960 year: 1992 ident: 1182_CR6 publication-title: J. Vac. Sci. Technol. A doi: 10.1116/1.577886 contributor: fullname: Y. Hirose – ident: 1182_CR4 doi: 10.1142/9789812816511_0005 – ident: 1182_CR8 – volume: 15 start-page: 257 year: 1986 ident: 1182_CR9 publication-title: Soviet Microelectronics contributor: fullname: V. I. Davydov – volume: 43 start-page: 596 year: 1986 ident: 1182_CR11 publication-title: Appl. Phys. Lett. doi: 10.1063/1.96478 contributor: fullname: F. J. Himpsel – volume: 88 start-page: 365 year: 2008 ident: 1182_CR7 publication-title: JETP Lett. doi: 10.1134/S0021364008180057 contributor: fullname: S. P. Suprun |
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| Snippet | The growth temperature dependences of the capacitance–voltage characteristics and chemical stability of the CaF
2
/BaF
2
buffer layers formed on Si by... The growth temperature dependences of the capacitance–voltage characteristics and chemical stability of the CaF2/BaF2 buffer layers formed on Si by molecular... |
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| SubjectTerms | Barium fluorides Buffer layers Calcium fluoride Capacitance-voltage characteristics Classical Mechanics Ions Mathematical and Computational Physics Molecular beam epitaxy Photoelectrons Physics Physics and Astronomy Secondary ion mass spectrometry Surface layers Theoretical |
| Title | Origin of Degradation of the CaF2/BaF2 Buffer Layers on Si(111) |
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