Origin of Degradation of the CaF2/BaF2 Buffer Layers on Si(111)

• Published in: Doklady. a journal of the Russian Academy of Sciences. Physics Vol. 65; no. 1; pp. 15 - 17
• Main Authors: Neizvestny, I. G., Ishchenko, D. V., Akhundov, I. O., Suprun, S. P., Tereshchenko, O. E.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 2020; Springer Nature B.V
• Subjects: Barium fluorides; Buffer layers; Calcium fluoride; Capacitance-voltage characteristics; Classical Mechanics; Ions; Mathematical and Computational Physics; Molecular beam epitaxy; Photoelectrons; Physics; Physics and Astronomy; Secondary ion mass spectrometry; Surface layers; Theoretical; calcium fluoride on silicon; adhesion; interface; epitaxy
• ISSN: 1028-3358; 1562-6903
• DOI: 10.1134/S1028335820010103

The growth temperature dependences of the capacitance–voltage characteristics and chemical stability of the CaF
2
/BaF
2
buffer layers formed on Si by molecular beam epitaxy have been investigated. Secondary ion mass spectrometry and X-ray photoelectron spectroscopy studies of the CaF
2
/Si interface suggest that the observed variations can be caused by the enrichment of the Si surface layer with calcium.