Phase Equilibria in the Al–Ga–As–Bi System at 900°C

• Published in: Inorganic materials Vol. 59; no. 7; pp. 691 - 695
• Main Authors: Khvostikov, V. P., Khvostikova, O. A., Potapovich, N. S., Vlasov, A. S.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-07-2023; Springer Nature B.V
• Subjects: Bismuth; Chemistry; Chemistry and Materials Science; Epitaxial growth; Industrial Chemistry/Chemical Engineering; Inorganic Chemistry; Isotherms; Liquidus; Materials Science; Phase equilibria; Solidus; phase equilibrium; Ga–Bi mixed melt; liquid-phase epitaxy
• ISSN: 0020-1685; 1608-3172
• DOI: 10.1134/S0020168523070087

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Solidus and liquidus isotherms in the Al–Ga–As–Bi system have been modeled for an initial epitaxy temperature of 900°C, which is needed for growing relatively thick (50–100 μm) compositionally graded Al
x
Ga
1–
x
As layers. The theoretical isotherms have been confirmed by experimental data. It has been shown that, to grow relatively thick (>50 μm) AlGaAs layers, it is reasonable to use Ga–Bi mixed melts containing no more than 20 at % bismuth.