Gallium Nitride–Based Heterostructures on Silicon Substrates for Powerful Microwave Transistors

• Published in: Nanotechnologies in Russia Vol. 14; no. 7-8; pp. 385 - 388
• Main Authors: Ezubchenko, I. S., Chernykh, M. Y., Andreev, A. A., Grishchenko, J. V., Chernykh, I. A., Zanaveskin, M. L.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-07-2019; Springer Nature B.V
• Subjects: Chemistry and Materials Science; Devices and Products Based on Nanomaterials and Nanotechnologies; Electron gas; Gallium nitrides; Heterostructures; Industrial and Production Engineering; Machines; Manufacturing; Materials Science; Nanotechnology; Processes; Semiconductor devices; Silicon; Silicon substrates; Transistors
• ISSN: 1995-0780; 1995-0799
• DOI: 10.1134/S1995078019040050

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A unique method for forming gallium nitride–based heterostructures on silicon substrates at low growth temperatures (less than 950°C) is proposed and implemented. The formed heterostructure has an atomically smooth surface with a mean square roughness of 0.45 nm and high crystalline quality. The average layer resistance of the channel of a two-dimensional electron gas was 415 Ω/square at an electron concentration of 1.65 × 10
13
cm
–2
and mobility 920 cm
2
/(V s). The maximum value of the drain saturation current for transistors with a gate width of 1.2 mm was 930 mA/mm, which corresponds to the best results worldwide for gallium nitride transistors on silicon substrates.