Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma

• Published in: Journal of experimental and theoretical physics Vol. 131; no. 6; pp. 940 - 944
• Main Authors: Perevalov, T. V., Iskhakzai, R. M. Kh, Aliev, V. Sh, Gritsenko, V. A., Prosvirin, I. P.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-12-2020; Springer Nature B.V
• Subjects: Atomic structure; Classical and Quantum Gravitation; Cyclotron resonance; Depletion; Electron cyclotron resonance; Electronic structure; Elementary Particles; First principles; Heat treatment; Hydrogen plasma; Oxide coatings; Parameter estimation; Particle and Nuclear Physics; Photoelectrons; Physics; Physics and Astronomy; Plasma; Quantum Field Theory; Relativity Theory; Silicon dioxide; Silicon oxides; Solid State Physics; Solids and Liquids; Spectrum analysis; Thin films; Valence band
• ISSN: 1063-7761; 1090-6509
• DOI: 10.1134/S1063776120110084

The silicon oxide thin films obtained by thermal SiO
2
treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO
2
, the more so the longer the treatment time. The atomic structure of the SiO
x

< 2
films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter
x
to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell.