The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm 2 stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency...

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Bibliographic Details
Published in:	Technical physics letters Vol. 42; no. 11; pp. 1099 - 1102
Main Authors:	Bochkareva, N. I., Ivanov, A. M., Klochkov, A. V., Tarala, V. A., Shreter, Yu. G.
Format:	Journal Article
Language:	English
Published:	Moscow Pleiades Publishing 01-11-2016 Springer Nature B.V
Subjects:	Classical and Continuum Physics Gallium nitrides Indium gallium nitrides Physics Physics and Astronomy Point defects
Online Access:	Get full text
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Summary:	It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm 2 stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency.
ISSN:	1063-7850 1090-6533
DOI:	10.1134/S1063785016110146