Electrically driven nanopyramid green light emitting diode

• Published in: Applied physics letters Vol. 100; no. 6; pp. 061106 - 061106-4
• Main Authors: Chang, S.-P., Chen, Y.-C., Huang, J.-K., Cheng, Y.-J., Chang, J.-R., Sou, K.-P., Kang, Y.-T., Yang, H.-C., Hsu, T.-C., Kuo, H.-C., Chang, C.-Y.
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 06-02-2012
• Subjects: Arrays; Gallium nitrides; Light-emitting diodes; Nanocomposites; Nanomaterials; Nanostructure; Walls; Wavelengths
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.3681363

An electrically driven nanopyramid green light emitting diode (LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch, pillar side wall passivation, and epitaxial regrowth. Multiple quantum wells were selectively grown on the facets of the nanopyramids. The fabricated LED emits green wavelength under electrical injection. The emission exhibits a less carrier density dependent wavelength shift and higher internal quantum efficiency as compared with a reference c-plane sample at the same wavelength. It shows a promising potential for using nanopyramid in high In content LED applications.