Pressure dependence of Schottky barrier height at the Pt/GaAs interface

• Published in: Applied physics letters Vol. 53; no. 11; pp. 974 - 976
• Main Authors: SHAN, W, LI, M. F, YU, P. Y, HANSEN, W. L, WALUKIEWICZ, W
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 12-09-1988
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electron states; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Metals, semimetals and alloys; Physics; Specific materials; Surface double layers, schottky barriers, and work functions; Theories and models of many electron systems; Gallium Arsenides; Electronic structure; Pressure effect; Fermi level; Transition metal; Experimental study; Pressure; Interface; Schottky barrier
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.100045

The Schottky barrier height at the Pt/GaAs interface has been measured as a function of pressure using a diamond anvil cell. The Schottky barrier height was found to shift to higher energy with a linear pressure coefficient of 11 meV/kbar, which is equal to the pressure coefficient of the fundamental gap of GaAs and with a nonlinear coefficient of −0.26 meV/kbar2. These results are discussed in terms of defect models which have been proposed to explain the Fermi level pinning in Schottky barriers.