Low spectral modulation high-power output from a new AlGaAs superluminescent diode/optical amplifier structure

• Published in: Applied physics letters Vol. 55; no. 22; pp. 2289 - 2291
• Main Authors: ALPHONSE, G. A, CONNOLLY, J. C, DINKEL, N. A, PALFREY, S. L, GILBERT, D. B
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 27-11-1989
• Subjects: ALUMINIUM ARSENIDES; ALUMINIUM COMPOUNDS; AMPLIFIERS; Applied sciences; ARSENIC COMPOUNDS; ARSENIDES; Circuit properties; DATA; Electric, optical and optoelectronic circuits; ELECTRONIC EQUIPMENT; Electronics; ENGINEERING; Exact sciences and technology; EXPERIMENTAL DATA; FIBER OPTICS; FIBERS; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; GYROSCOPES; HETEROJUNCTIONS; INFORMATION; Integrated optoelectronics. Optoelectronic circuits; JUNCTIONS; LASER CAVITIES; LASERS; MODULATION; NUMERICAL DATA; Optical and optoelectronic circuits; OPTICAL FIBERS; PNICTIDES; POWER; POWER RANGE MILLI W; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; SENSITIVITY; SOLID STATE LASERS 426002 > Engineering > Lasers & Masers > (1990-); USES
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.102040

A double-heterojunction angled stripe AlGaAs device consisting of an index-guided ridge waveguide with gain-guided facet regions has produced cw output powers of 20 mW with less than 1% spectral modulation from a 300-μm-long diode. These properties enable these devices to have important use in high-sensitivity fiber optic gyroscopes and as broadband traveling-wave optical amplifiers.