Comprehensive modeling of silicon microstrip detectors

• Published in: IEEE transactions on nuclear science Vol. 44; no. 3; pp. 598 - 605
• Main Authors: Passeri, D., Ciampolini, P., Baroncini, M., Santocchia, A., Bilei, G.M., Checcucci, B., Fiandrini, E.
• Format: Journal Article
• Language: English
• Published: IEEE 01-06-1997
• Subjects: Analytical models; Conductivity; Equations; Large Hadron Collider; Microstrip; Production; Radiation detectors; Semiconductor device packaging; Silicon radiation detectors; Transient analysis
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.603718

In this work, the application of numerical device simulation to the analysis of high resistivity silicon microstrip detectors is illustrated. The analysis of DC, AC and transient responses of a single-sided, DC-coupled detector has been carried out, providing results in good agreement with experimental data. In particular, transient-mode simulation has been exploited to investigate the collection of charges generated by ionizing particles. To this purpose, an additional generation term has been incorporated into the transport equations; the motion of impact-generated carriers under the combined action of ohmic and diffusive forces is hence accounted for. Application to radiation tolerance studies is also introduced.