3D calculation studies of dislocation density in a β-Ga2O3 crystal grown by vertical Bridgman method

• Published in: Journal of crystal growth Vol. 609; p. 127126
• Main Authors: Kakimoto, Koichi, Takahashi, Isao, Tomida, Taketoshi, Kamada, Kei, Yao, Yongzhao, Nakano, Satoshi, Yoshikawa, Akira
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-05-2023
• Subjects: A1. Computer simulation; A1. Line defects; A2. Growth from melt; A1. Computer simulation; A2. Growth from melt; A1. Line defects
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2023.127126

•This paper reports on 3D calculation studies of dislocation density in a β-Ga2O3 crystal grown by vertical Bridgman method.•Numerical study based on a model was carried out for modeling of dislocation density.•The results obtained from [010] grown crystal show that large number of dislocation distributed at the periphery of the [010] grown crystals at an initial stage.•The results obtained from [001] grown crystal show that large number of dislocation distributed lies along [0−10] at the middle stage of the process.
This paper reports numerical study of dislocation-density distribution in a β-gallium oxide. We calculated time dependent distributions of temperature and velocity in a furnace of a vertical Bridgman method. Then, we used Alexander-Haasen (AH) model in three-dimensional configuration. Growth directions were set to show different orientations: [010] and [001]. The results obtained from [010] grown crystal show that large number of dislocation distributed at the periphery of the [010] grown crystals at an initial stage of the crystal growth process while the maximum dislocation density lies along [100] at the middle stage of the process. The results obtained from [001] grown crystal show that large number of dislocation distributed also lies along [100] at the middle stage of the process.