Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

• Published in: Infrared physics & technology Vol. 76; pp. 542 - 545
• Main Authors: Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-05-2016
• Subjects: Backside illuminated photodiodes; Dark current; InAs photodiodes; Infrared sensors; IR gas sensors; Mid-IR detectors; Pyrometry; Mid-IR detectors; Dark current; Infrared sensors; Backside illuminated photodiodes; IR gas sensors; InAs photodiodes; Pyrometry
• ISSN: 1350-4495; 1879-0275
• DOI: 10.1016/j.infrared.2016.04.002

•Lowest capacitance of InAs heterojunction PD.•Fast response.•High detectivity in the 3μm range.•BLIP operation at 150K at 3μm.•Flip-chip design.
P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure photodiodes with linear impurity distribution in the space charge region have been fabricated and studied. The photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8·10−6A/cm2, Vbias=−0.5V, 164K) and background limited infrared photodetector (BLIP) regime starting from 150K (2π field of view, D3.1μm∗=1.4·1012cmHz1/2/W) have been demonstrated.