Structural elucidation, hydrogen bonding motifs and solid state properties of p-toluenesulfonate salt of β-alaninine for optoelectronic device application

Single crystal of β-alaninium p-toluenesulfonate (BAPT) has been grown by solvent slow evaporation method. Crystal structure of the title compound has been elucidated by single crystal XRD analysis. In structural analysis, chain and ring motifs lead to the hydrophilic layers at z = 0, 1/2 and 1 whic...

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Bibliographic Details
Published in:Journal of molecular structure Vol. 1221; p. 128820
Main Authors: Suresh, Muthu, Siva, Vadivel, Bahadur, Sultan Asath, Athimoolam, Shunmuganarayanan
Format: Journal Article
Language:English
Published: Elsevier B.V 05-12-2020
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Summary:Single crystal of β-alaninium p-toluenesulfonate (BAPT) has been grown by solvent slow evaporation method. Crystal structure of the title compound has been elucidated by single crystal XRD analysis. In structural analysis, chain and ring motifs lead to the hydrophilic layers at z = 0, 1/2 and 1 which is sandwiched between the hydrophobic layers at x = 1/4 and ¾. FTIR and FT-Raman spectra have been recorded to confirm the vibrational modes of the crystal. Optical behavior has been studied by UV–Vis–NIR analysis. Thermal properties of BAPT crystal has been investigated by TG-DTA measurements. Mechanical nature of material was studied through Vicker’s micro hardness studies. From dielectric measurements, relative dielectric permittivity values and theoretical values of polarizability values were determined. The third order NLO responses of BAPT has been analyzed by the Z-scan technique. [Display omitted] •Novel hydrogen bonded single crystals of β-alaninium p-toluenesulfonate has been grown by solution growth method.•Wide optical transparency of the crystal makes it suitable for NLO applications.•Grown crystal is thermally stable up to 155 °C.•Z Scan measurement values shows that grown crystal can be proclaimed as promising candidate for photonic applications.
ISSN:0022-2860
1872-8014
DOI:10.1016/j.molstruc.2020.128820