Poly(arylene ether nitrile) ternary dielectric composites modulated via polydopamine-assisted BaTiO3 decorating MoS2 sheets

• Published in: Ceramics international Vol. 46; no. 11; pp. 19181 - 19190
• Main Authors: Feng, Mengna, Li, Chunting, He, Meng, Huang, Yumin, Luo, Juhua
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-08-2020
• Subjects: Dielectric properties; Multiple interfaces; Permittivity-temperature stability; Polymer composites; Polymer composites; Multiple interfaces; Dielectric properties; Permittivity-temperature stability
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/j.ceramint.2020.04.253

Flexible, high-k and thermostability polymer-based dielectric composites are the core components in electrostatic capacitors and embedded devices. Herein, the dielectric polymer matrix composites are developed by embedding polydopamine (PDA)-encapsulated hydroxylated barium titanate (BTH) and molybdenum disulfide (MoS2) into poly(arylene ether nitrile) (PEN) matrix. The MoS2/PDA@BTH-1 particles served as fillers are prepared by polydopamine deposition technology assisted with hydrogen bonding interactions. The introduction of PDA intermediate layer contributes to the construction of multiple interfaces and nanocapacitor networks, enhancing interfacial polarization. Based on this, the resulted dielectric composite with 15 wt% MoS2/PDA@BTH-1 loading exhibits the dielectric constant of 17.3 at 1 kHz, higher than that of 4.2 of PEN, while can maintain relatively low dielectric loss simultaneously. The possible mechanisms and synergistic enhancement effect of MoS2/PDA@BTH-1 particles on the dielectric properties of composites are also proposed. The results of permittivity-temperature stability show that the dielectric constant of PEN-based dielectric composites is stable when reaches 158 °C, indicating that the film can be used in capacitor at temperatures up to 150 °C, higher than that of most polymer capacitors. All in all, a feasible pathway is provided to design PEN-based dielectric composites with high-k to adopt the high-temperature environment in electrostatic capacitors and embedded devices.