Reactive epitaxy of Co nanoparticles on (111) Si

The formation of epitaxial CoSi2 islands of nanoscopic dimensions is reported using the technique of reactive cluster deposition. Co clusters in the size range 5–50 nm were synthesized by sputtering of a high purity Co target inside a ultra high vacuum (UHV) sputtering chamber, using the technique o...

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Bibliographic Details
Published in:	Journal of Electron Microscopy Vol. 50; no. 6; pp. 545 - 548
Main Authors:	Yeadon, Mark, Zimmermann, Claus G., Averback, Robert S., Gibson, J. Murray
Format:	Journal Article
Language:	English
Published:	Japan Oxford University Press 01-01-2001
Subjects:	cobalt silicide inert gas condensation in‐situ TEM nanoparticles reactive epitaxy
Online Access:	Get full text
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Summary:	The formation of epitaxial CoSi2 islands of nanoscopic dimensions is reported using the technique of reactive cluster deposition. Co clusters in the size range 5–50 nm were synthesized by sputtering of a high purity Co target inside a ultra high vacuum (UHV) sputtering chamber, using the technique of inert gas condensation. The clusters were then deposited on the reconstructed Si (111) surface. Upon annealing, the particles reacted with the Si substrate to form epitaxial CoSi2. Our observations were made using a JEOL 200CX transmission electron microscope modified for in situ sputtering and UHV conditions.
Bibliography:	local:500545 ark:/67375/HXZ-BXLH6J4D-D istex:38A46EC1952E2639F851451D4F77D51A2FC8446D SourceType-Other Sources-1 content type line 63 ObjectType-Correspondence-1
ISSN:	0022-0744 1477-9986 1460-2393
DOI:	10.1093/jmicro/50.6.545