Measurement of proton radiation damage to Si avalanche photodiodes

Measurement of proton radiation damage to Si avalanche photodiodes

The effects of proton radiation damage on EG&G C30902S Si avalanche photodiodes (APD's) were measured. The APD bulk leakage current increased at 0.29 fA/rad, or about 1800 dark photoelectrons per rad(Si) at -10/spl deg/C under 16.2 MeV protons. There was little change in the breakdown volta...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 44; no. 12; pp. 2160 - 2166
Main Authors: Xiaoli Sun, Reusser, D., Dautet, H., Abshire, J.B.
Format: Journal Article
Language:English
Published: IEEE 01-12-1997
Subjects:
Avalanche photodiodes
Earth
Electrons
Extraterrestrial measurements
Ionization
Leakage current
Neutrons
Photodetectors
Protons
Sun
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Summary:The effects of proton radiation damage on EG&G C30902S Si avalanche photodiodes (APD's) were measured. The APD bulk leakage current increased at 0.29 fA/rad, or about 1800 dark photoelectrons per rad(Si) at -10/spl deg/C under 16.2 MeV protons. There was little change in the breakdown voltage with the radiation doses up to 30 krad(Si). The increase in the total dark currents below the breakdown voltage was insignificant until 3 krad(Si).
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.644630