New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs

New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs

The kink effect in InAlAs/InGaAs/InP composite channel heterojunction field effect transistors (HFETs) was investigated as a function of temperature and optical excitation. Drain source and gate current measurements show that above 325 K the kink effect disappears while the impact ionization process...

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Bibliographic Details
Published in:IEEE electron device letters Vol. 19; no. 5; pp. 154 - 156
Main Authors: Georgescu, B., Py, M.A., Souifi, A., Post, G., Guillot, G.
Format: Journal Article
Language:English
Published: IEEE 01-05-1998
Subjects:
Current measurement
FETs
HEMTs
Heterojunctions
Impact ionization
Indium compounds
Indium gallium arsenide
Indium phosphide
MODFETs
Temperature
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Summary:The kink effect in InAlAs/InGaAs/InP composite channel heterojunction field effect transistors (HFETs) was investigated as a function of temperature and optical excitation. Drain source and gate current measurements show that above 325 K the kink effect disappears while the impact ionization process is still present. The kink at low temperatures is suppressed by illumination with photons of energy above 1 eV. These results prove that this parasitic effect is mainly related to the presence of traps in the top layers.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.669733