Optical study of porous silicon buried waveguides fabricated from p-type silicon

• Published in: Materials science in semiconductor processing Vol. 3; no. 5; pp. 357 - 361
• Main Authors: Charrier, J, Lupi, C, Haji, L, Boisrobert, C
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-10-2000
• Subjects: Near field pattern; Optical loss; Optical waveguide; Oxidised porous silicon; Optical loss; Optical waveguide; Oxidised porous silicon; Near field pattern
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/S1369-8001(00)00056-1

The realisation of optical buried waveguides fabricated from porous silicon layers is presented. The refractive index of porous silicon layer varies according to its porosity and its oxidisation process conditions. So either step or graded index waveguides are achieved. These waveguides are formed by a localised anodisation of heavily doped p-type silicon wafers. Measurements at a wavelength of 1.3
μm yield waveguide losses below 4
dB/cm. The waveguides are also characterised by the near-field-guided mode profile at 1.3
μm. This study deals with the modulation of the waveguiding-layer refractive index and the losses on waveguides fabricated from p
+.