AlSb single-crystal grown by HPBM

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 458; no. 1; pp. 448 - 454
• Main Authors: Kutny, V.E., Rybka, A.V., Abyzov, A.S., Davydov, L.N., Komar, V.K., Rowland, M.S., Smith, C.F.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-02-2001
• Subjects: AlSb; Crucible material; High-pressure Bridgman; Semiconductors; Single-crystal growth; Crucible material; Semiconductors; AlSb; Single-crystal growth; High-pressure Bridgman; 81.10.Fq: 72.80.Ey
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/S0168-9002(00)01039-1

Theoretical prognosis for AlSb places this widegap compound among the best materials for room temperature detectors and spectrometers. However, results experimentally obtained with AlSb are somewhat discouraging showing the necessity for improving the compound quality. The main difficulties connected with single-crystal growth are high reactivity of the melt with crucible material and a high volatility of Sb. In order to counteract the latter obstacle, an attempt was undertaken to synthesize and grow AlSb crystals by HPBM under the inert gas pressure of 40
atm. Different crucible materials: aluminum oxide, vitreous carbon, quartz, graphite, beryllium oxide, and zirconium oxide were tested and their comparative analysis was made. The obtained crystals were investigated and some electrophysical properties measured.