Properties on request in semi-Heusler phases

• Published in: Journal of alloys and compounds Vol. 262; pp. 101 - 107
• Main Authors: Pierre, J., Skolozdra, R.V., Tobola, J., Kaprzyk, S., Hordequin, C., Kouacou, M.A., Karla, I., Currat, R., Leliévre-Berna, E.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 14-11-1997
• Subjects: Electronic structure; Half metallic ferromagnet; Itinerant magnetism; Semiconductor-metal cross-over; Half metallic ferromagnet; Electronic structure; Itinerant magnetism; Semiconductor-metal cross-over
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/S0925-8388(97)00337-X

Various transport and magnetic properties of semi-Heusler phases are described, which arise from the particular crystallographic structure and narrow band phenomena. Semiconducting-to-metal cross overs are observed by varying the electron concentration. The onset of weak itinerant ferromagnetism often arises in the metallic state. Even in NiMnSb, where the strong ferromagnetism results in a half metallic state below 80 K, the magnetism evolves from Heinsenberg-like to itinerant by increasing the temperature. Giant magnetoresistance effects are observed in the semiconducting rare earth compounds NiRSb.