TCAD calibration of USJ profiles for advanced deep sub-μm CMOS processes

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 186; no. 1; pp. 303 - 308
• Main Authors: Zechner, C, Matveev, D, Erlebach, A, Simeonov, S, Menialenko, V, Mickevicius, R, Foad, M, Al-Bayati, A, Lebedev, A, Posselt, M
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2002
• Subjects: Calibration; CMOS; Process simulation; TCAD; Ultra shallow junction; CMOS; Calibration; Ultra shallow junction; TCAD; Process simulation
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/S0168-583X(01)00909-0

For advanced technologies there is a lack of experimental data and calibrated physical models that enable accurate simulation of CMOS technologies down to channel lengths of 100 nm and below. This work aims to develop predictive modeling of ultra shallow junctions (USJ) profiles for state-of-the-art and next generation CMOS devices. Profiles were created by As (0.2–10 keV), B (0.2–10 keV) and BF
2 (1–25 keV) ion implantation and annealed at various times and temperatures including typical drain extension spike anneals. B and BF
2 profiles are investigated with and without pre-amorphization by implantation of Si or Ge. The calibration is based on SIMS and SRP profiles as well as XTEM pictures. The BC code Crystal-TRIM was calibrated for ultra low energy implantation. Annealing is simulated within the pair diffusion framework of the process simulator DIOS, including first order reaction equations for interstitial and dopant clustering and a new model for dose loss, where impurities are stored in a thin surface layer on top of the silicon.