Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 57; no. 6; pp. 300 - 304
• Main Authors: Karlina, L. B., Vlasov, A. S., Smirnova, I. P., Ber, B. Ya, Kazantsev, D. Yu, Tokarev, M. V., Soshnikov, I. P.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-06-2023; Springer; Springer Nature B.V
• Subjects: Arsenic; Composition; Equilibrium conditions; Gallium arsenide; Indium; Indium phosphides; Magnetic Materials; Magnetism; Nanostructure; Nanowires; Phosphorus; Physics; Physics and Astronomy; Substrates; InGaAsP lateral nanowires; photoluminescence; Raman spectroscopy; “vapor-liquid-solid” growth mechanism
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782623080067

The possibility of controlling the composition of lateral nanowires by the method of growth under quasi-equilibrium conditions in a quasi-closed volume from indium, phosphorus, and arsenic vapors with Au catalyst in the “vapor-liquid-solid” mechanism has been demonstrated for the first time. It has been experimentally shown that the additional presence of arsenic in the indium-phosphorus source leads to the coalescence of catalytic gold droplets at the initial stage of the growth, which determines the further morphology and growth kinetics of nanostructures. An additional formation of indium phosphide nanostructures with a composition different from that of the main nanowires was found. The results of the studies expand the possibilities of the developed method for obtaining lateral nanowires on gallium arsenide substrates.