Monopolar Resistive Switching in Diamond-Like Carbon Films

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 53; no. 14; pp. 1970 - 1973
• Main Authors: Vedeneev, A. S., Luzanov, V. A., Rylkov, V. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-12-2019; Springer; Springer Nature B.V
• Subjects: Carbon; Current voltage characteristics; Diamond-like carbon films; Film growth; Low resistance; Magnetic Materials; Magnetism; Nanostructure Devices; Physics; Physics and Astronomy; Plasma; Polarity; Switching; diamond-like carbon; hybridization; and; reversible resistive switching
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782619140252

Current–voltage characteristics were studied for Pt/diamond-like C/Pt structures based on thin (20 nm) diamond-like carbon films, when the ratio between carbon phases with
sp
2
and
sp
3
hybridization was controlled by the film growth conditions at the high-frequency diode sputtering method. The effects of resistive switching from the initial high-resistive state to a low-resistive state at an applied voltage of
V
~ 3 V and reverse switching at
V
~ 0 are detected. These effects are symmetric with respect to change in voltage polarity and are associated with the change in the hybridization type of local carbon regions, which causes switching from the high- to low-resistive state in strong (~10
6
V/cm) fields because of
sp
3
→
sp
2
transitions and reverse switching in the field absence. The high-to-low resistance ratio reaches ~50.