Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects

Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects

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Bibliographic Details
Published in:Microelectronics and reliability Vol. 43; no. 9; pp. 1417 - 1426
Main Author: Lucovsky, G.
Format: Journal Article
Language:English
Published: Elsevier Ltd 01-09-2003
Online Access:Get full text
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Description
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(03)00253-1