Investigation into Radiation Effects in a p-Channel MOS Transistor

Investigation into Radiation Effects in a p-Channel MOS Transistor

The influence of γ radiation on surface defect formation at the Si–SiO 2 interface in a p -type-channel metal—oxide-silicon (MOS) transistor in the passive mode is considered. Several surface-defect formation processes are observed. The role of molecular hydrogen in the undergate oxide of the MOS tr...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 54; no. 8; pp. 877 - 881
Main Authors: Kuzminova, A. V., Kulikov, N. A., Popov, V. D.
Format: Journal Article
Language:English
Published: Moscow Pleiades Publishing 01-08-2020
Springer
Springer Nature B.V
Subjects:
Electrons
Gamma rays
Hydrogen
Integrated circuits
Magnetic Materials
Magnetism
MOS devices
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Radiation effects
Semiconductor chips
Semiconductor devices
Silicon dioxide
Surface defects
Transistors
γ radiation
channel
MOS transistor
molecular hydrogen
“hot” electrons
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Summary:The influence of γ radiation on surface defect formation at the Si–SiO 2 interface in a p -type-channel metal—oxide-silicon (MOS) transistor in the passive mode is considered. Several surface-defect formation processes are observed. The role of molecular hydrogen in the undergate oxide of the MOS transistor and “hot” electrons forming in the silicon surface region is shown.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620080138