Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 53; no. 16; pp. 2068 - 2071
• Main Authors: Berdnikov, Y., Sibirev, N. V., Koryakin, A.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-12-2019; Springer; Springer Nature B.V
• Subjects: Arrays; Epitaxial growth; Epitaxy; Evaporation rate; Magnetic Materials; Magnetism; Mathematical analysis; Molecular beam epitaxy; Nanostructures Technology; Nanowires; Physics; Physics and Astronomy; Silicon substrates; length distributions; nanowires; self-catalyzed growth; GaAs
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782619120066

In this work, we account the local variations of nanowire number density to extend the previous approaches to modeling of III–V nanowire length distributions in lithography-free self-catalyzed growth processes. We calculate the growth rate controlled by the re-evaporation of group V atoms from the substrate and derive the analytical expressions for length distributions in irregular arrays of nanowires. The obtained theoretical results fit well the experimentally observed statistics of self-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si/SiO
x
substrates.