Low supersaturation nucleation and “contactless” growth of photorefractive ZnTe crystals

• Published in: Journal of crystal growth Vol. 174; no. 1; pp. 719 - 725
• Main Authors: Grasza, K., Trivedi, S.B., Yu, Zengchen, Kutcher, S.W., Palosz, W., Brost, G.A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-04-1997
• Subjects: Crystal growth from the vapor; Doping by transition metals; Lowsupersaturation nucleation; Photorefractive materials; ZnTe; 81.05.Dz; Crystal growth from the vapor; Photorefractive materials; 81.10.Bk; 42.70.Nq; Lowsupersaturation nucleation; 61.72.Vv; ZnTe; Doping by transition metals
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(97)00026-2

New photorefractive ZnTe crystals have been successfully grown by methods previously applied only for the growth of CdTe single crystals [K. Grasza, J. Crystal Growth 146 (1995) 65]. The main feature of this method lies in the novel procedure of self-seeding in conditions of permanently low supersaturation, growth with no contact between the crystal and ampoule wall, self-purification and improvement of stoichiometry of the source material during growth. Additionally, a new procedure of lowering the optimal growth temperature was applied and an optimal growth rate with stable growth conditions was investigated. The ZnTe crystals had resistivity exceeding 10
8 Ω · cm. Photorefractive characterization was performed using the two-beam mixing technique, and the photorefractive gain in the range 0.63–1.5 μm was measured.