Analysis of signal to noise ratio of photoconductive layered solid-state imaging device

The signal to noise ratio of the photoconductive layered solid-state imaging device (PSID) has been theoretically derived. In this analysis the noise suppression effect due to residual signal electrons in the storage diode after read-out operation, the optical shot noise, and the fluctuation of the...

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Published in:	IEEE transactions on electron devices Vol. 42; no. 1; pp. 38 - 42
Main Authors:	Matsunaga, Y., Hatori, F., Tango, H., Yoshida, O.
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01-01-1995 Institute of Electrical and Electronics Engineers
Subjects:	Applied sciences Diodes Electron optics Electronics Exact sciences and technology Fluctuations Optical imaging Optical noise Optoelectronic devices Photoconducting devices Photoconductivity Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal analysis Signal to noise ratio Solid state circuits Semiconductor device Noise reduction Solid state device Optoelectronic device Theoretical study Image sensor Performance Signal to noise ratio
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Abstract	The signal to noise ratio of the photoconductive layered solid-state imaging device (PSID) has been theoretically derived. In this analysis the noise suppression effect due to residual signal electrons in the storage diode after read-out operation, the optical shot noise, and the fluctuation of the number of transferred signal electrons due to incomplete readout signal electrons were considered. The obtained result showed good agreement to the experimental result.< >
AbstractList	The signal to noise ratio of the photoconductive layered solid-state imaging device (PSID) has been theoretically derived. In this analysis the noise suppression effect due to residual signal electrons in the storage diode after read-out operation, the optical shot noise, and the fluctuation of the number of transferred signal electrons due to incomplete readout signal electrons were considered. The obtained result showed good agreement to the experimental result.< > The signal to noise ratio of the photoconductive layered solid-state imaging device (PSID) has been theoretically derived. In this analysis the noise suppression effect due to residual signal electrons in the storage diode after read-out operation, the optical shot noise, and the fluctuation of the number of transferred signal electrons due to incomplete readout signal electrons were considered. The obtained result showed good agreement to the experimental result
Author	Hatori, F. Matsunaga, Y. Tango, H. Yoshida, O.
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Cites_doi	10.1109/IEDM.1982.190285 10.1002/j.1538-7305.1974.tb02790.x 10.1117/12.940182 10.1109/16.119012 10.1109/PROC.1975.9707 10.1109/16.78363 10.1109/16.78364
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References	yamamura (ref3) 1987; 765 ref7 ref4 barbe (ref6) 1975; 63 ref2 ref1 teranishi (ref5) 1982
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Snippet	The signal to noise ratio of the photoconductive layered solid-state imaging device (PSID) has been theoretically derived. In this analysis the noise...
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SubjectTerms	Applied sciences Diodes Electron optics Electronics Exact sciences and technology Fluctuations Optical imaging Optical noise Optoelectronic devices Photoconducting devices Photoconductivity Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal analysis Signal to noise ratio Solid state circuits
Title	Analysis of signal to noise ratio of photoconductive layered solid-state imaging device
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