Analysis of signal to noise ratio of photoconductive layered solid-state imaging device

• Published in: IEEE transactions on electron devices Vol. 42; no. 1; pp. 38 - 42
• Main Authors: Matsunaga, Y., Hatori, F., Tango, H., Yoshida, O.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-01-1995; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Diodes; Electron optics; Electronics; Exact sciences and technology; Fluctuations; Optical imaging; Optical noise; Optoelectronic devices; Photoconducting devices; Photoconductivity; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Signal analysis; Signal to noise ratio; Solid state circuits; Semiconductor device; Noise reduction; Solid state device; Optoelectronic device; Theoretical study; Image sensor; Performance; Signal to noise ratio
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.370038

The signal to noise ratio of the photoconductive layered solid-state imaging device (PSID) has been theoretically derived. In this analysis the noise suppression effect due to residual signal electrons in the storage diode after read-out operation, the optical shot noise, and the fluctuation of the number of transferred signal electrons due to incomplete readout signal electrons were considered. The obtained result showed good agreement to the experimental result.< >