Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation

• Published in: Vacuum Vol. 182; p. 109724
• Main Authors: Stepanov, A.L., Batalov, R.I., Bayazitov, R.M., Rogov, A.M.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-12-2020
• Subjects: Ion implantation; Pulse ion annealing; Silicon; Silver nanoparticles; Pulse ion annealing; Ion implantation; Silicon; Silver nanoparticles
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/j.vacuum.2020.109724

The paper presents the results of Si surface modification created by implantation with Ag+ ions at energy of 30 keV, current density of 8 μA/cm2 for various doses from 6.0·1015 to 7.5·1016 ion/cm2 and annealed by powerful beam pulses (C+, H+) of nanosecond duration. Scanning electron microscopy and optical reflection measurements showed that after ion implantation an amorphous a-Si layer on the surface of c-Si substrates with Ag nanoparticles was formed. Followed pulse ion beam annealing of sample obtained at lowest dose of 6.0·1015 ion/cm2 leads to melting and recrystallization of the Si surface layer with segregation of Ag nanoparticles. For samples implanted with doses higher than 2.5·1016 ion/cm2 after annealing an epitaxial cellular breakdown structures are fabricated on the Si surface decorated at the cell boundaries by Ag nanoparticles.
•Modification of Si surface created by implantation with Ag+ ions.•Amorphous a-Si layer on the surface of c-Si substrates with Ag nanoparticles was formed.•After annealing an epitaxial cellular breakdown structures are fabricated.