High performance near-infrared III-Arsenide laser diodes with p-AlGaAs barriers

• Published in: Optical materials Vol. 139; p. 113809
• Main Authors: Saeed, Sana, Usman, Muhammad, Ali, Shazma, Ali, Hamid, Mustafa, Laraib
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-05-2023
• Subjects: III-Arsenide; Infrared; Laser diodes; p-AlGaAs barriers; Power; Single quantum well (SQW); III-Arsenide; Infrared; Single quantum well (SQW); Laser diodes; Power; p-AlGaAs barriers
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2023.113809

We have employed p-AlGaAs barriers in the Single Quantum Well-Separate Confinement Heterostructure-Laser Diode (SQW-SCH-LD) numerically. The optoelectronic properties of the diode are found to be improved. This is due to the higher active zone carrier radiative recombination, lower p-side electron leakage, and higher hole injection. The threshold current density at which lasing starts is lowered from ∼1133 A/cm2 to ∼637 A/cm2 in the suggested device employing p-AlGaAs barriers.
•Thin p-AlGaAs barriers have been employed in the Single Quantum Well-Separate Confinement Heterostructure-Laser Diode (SQW-SCH-LD).•Thin p-AlGaAs barriers have improved the performance of infrared light-emitting diodes.•Detailed optoelectronic properties of the reference and our proposed device have been presented.