P-doped p -type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering

P-doped p -type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering

P-doped ZnO films were deposited on n - Si substrate by radio-frequency magnetron sputtering. Hall measurements revealed that the films annealed in situ at 750 ° C in an oxygen ambient at a pressure of 1.3 × 10 − 3 - 3.9 × 10 − 3 Pa showed p -type behavior with a hole concentration of 2.7 × 10 16 -...

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Bibliographic Details
Published in:Applied physics letters Vol. 88; no. 15; pp. 152102 - 152102-3
Main Authors: Wang, P., Chen, NuoFu, Yin, Z. G.
Format: Journal Article
Language:English
Published: United States American Institute of Physics 10-04-2006
Subjects:
ANNEALING
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
HALL EFFECT
HETEROJUNCTIONS
HOLE MOBILITY
MATERIALS SCIENCE
OXYGEN
PHOSPHORUS
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS
ZINC OXIDES
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Summary:P-doped ZnO films were deposited on n - Si substrate by radio-frequency magnetron sputtering. Hall measurements revealed that the films annealed in situ at 750 ° C in an oxygen ambient at a pressure of 1.3 × 10 − 3 - 3.9 × 10 − 3 Pa showed p -type behavior with a hole concentration of 2.7 × 10 16 - 2.2 × 10 17 cm − 3 , a mobility of 4 - 13 cm 2 ∕ V s , and a resistivity of 10.4 - 19.3 Ω cm . Films annealed at 750 ° C in a vacuum or in oxygen ambient at higher pressures ( 5.2 × 10 − 3 and 6.5 × 10 − 3 Pa ) showed n -type behavior. Additionally, the p - Zn O ∕ n - Si heterojunction showed a diodelike I - V characteristic. Our results indicate that P-doped p -type ZnO films can be obtained by annealing in oxygen ambient at very low pressures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2193798