Optical structure modification induced by lattice strain in Mn-doped CdSe QDs
Narrow size distribution manganese-doped cadmium selenide quantum dots (Mn-doped CdSe QDs) successfully synthesized using inverse Micelle technique with organic solvent and surfactant possesses zinc blende structure with physical size ranging from 3 to 14 nm and crystallite size 2.46–5.46 nm. Mn-dop...
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Published in: | Optical materials Vol. 86; pp. 441 - 448 |
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Main Authors: | , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Elsevier B.V
01-12-2018
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Online Access: | Get full text |
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Summary: | Narrow size distribution manganese-doped cadmium selenide quantum dots (Mn-doped CdSe QDs) successfully synthesized using inverse Micelle technique with organic solvent and surfactant possesses zinc blende structure with physical size ranging from 3 to 14 nm and crystallite size 2.46–5.46 nm. Mn-doped CdSe QDs observed to growth larger QDs compared to pure CdSe QDs at significantly same reaction times. The lattice parameter compressed with QDs sizes growth due to the introduction of lattice strain provoked by the incorporation of Mn atoms into CdSe QDs lattice. The Mn-doped CdSe QDs shows a slight blue-shift on absorption and emission spectra's compared to pure CdSe even though is possessed larger QDs. The band gap structure modification prominently affected by the lattice strain were transition of Stoke's, Rayleigh to anti-Stoke`s shifts observed as the Mn-doped CdSe QDs size growth. The typical red-shift of absorption and emission wavelength observed with growth of QDs sizes. The role of oleic acid as a surfactant and capping agent shows in FTIR spectra. The lattice strain tailored the binding energy between the ion prominently on the surface of the QDs with growth of QDs sizes.
•Synthesis and characterizations of Mn-doped CdSe QDs at different sizes.•Unique pattern of HOMO/LUMO electron transition with temporal evolution of QDs size.•Modification of optical structure of QDs expected to be induced by manganese doping mechanism. |
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ISSN: | 0925-3467 1873-1252 |
DOI: | 10.1016/j.optmat.2018.10.041 |