Efficient Electrical Transport Through Oxide‐Mediated InP‐on‐Si Hybrid Interfaces Bonded at 300 °C

• Published in: Physica status solidi. A, Applications and materials science Vol. 218; no. 3
• Main Authors: Talneau, Anne, Beaudoin, Grégoire, Patriarche, Gilles, Ducroquet, Frédérique
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01-02-2021; Wiley
• Subjects: 3D hybrid integration on silicon; Bonding; electrical transports; Engineering Sciences; Heterostructures; Indium phosphides; Optoelectronic devices; Physics; semiconductors hybrid interfaces; Silicon dioxide; Zinc oxide; Electrical transport; 3D hybrid integration on Silicon; Semiconductors hybrid interfaces
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.202000317

For complementary metal–oxide semiconductor processing compatibility, hybrid bonding of III–V materials on silicon should be operated below 300 °C, requiring an interfacial layer as thin as possible to not hamper the electrical transport through the interface. Both SiO2 and ZnO interfacial layers are investigated in the case of n‐InP/n‐Si hybrid heterostructures. Efficient electrical transport through oxide‐mediated bonded InP/Si heterostructures is demonstrated, related to tunneling through the oxide‐interfacial layer. These electrically operated oxide‐interfacial‐layer heterostructures provide both efficient bonding processing and open the field for full 3D design and operation of optoelectronic devices.
Within III–V on silicon hybrid photonics, the ability to electrically operate the hybrid interface will open the full 3‐dimentional field for improved devices design and performances. Herein, efficient electrical transport through oxide‐mediated InP on Si‐bonded interfaces is demonstrated, where the bonding is being carried out at 300 °C with or 1.2 nm‐thick SiO2 layer or 4 nm‐thick ZnO layer.