CdZnTe:Cl Crystals for X-Ray Computer Tomography Detectors

Processes of growth of semi‐insulating Cd1—xZnxTe:Cl crystals (x = 0.0002 and 0.1) of n‐type conductivity are investigated. From the grown crystals detectors for X‐ray computer tomography with small value of photocurrent memory (afterglow) (0.1–0.3%) are obtained.

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Bibliographic Details
Published in:	physica status solidi (b) Vol. 229; no. 2; pp. 1073 - 1076
Main Authors:	Matveev, O.A., Terentev, A.I., Karpenko, V.P., Zelenina, N.K., Fauler, A., Fiederle, M., Benz, K.W.
Format:	Journal Article
Language:	English
Published:	Berlin WILEY-VCH Verlag Berlin GmbH 01-01-2002 WILEY‐VCH Verlag Berlin GmbH
Subjects:	7.85.Fv 71.55.Gs 72.40.+w 81.10.Fq S8.13
Online Access:	Get full text
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Description
Summary:	Processes of growth of semi‐insulating Cd1—xZnxTe:Cl crystals (x = 0.0002 and 0.1) of n‐type conductivity are investigated. From the grown crystals detectors for X‐ray computer tomography with small value of photocurrent memory (afterglow) (0.1–0.3%) are obtained.
Bibliography:	ark:/67375/WNG-CQWVXJNC-X istex:42F2E4458B922AB098CA1ACD5E9707A5CDB52B3B ArticleID:PSSB1073
ISSN:	0370-1972 1521-3951
DOI:	10.1002/1521-3951(200201)229:2<1073::AID-PSSB1073>3.0.CO;2-3