Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 113; pp. 14 - 20
• Main Authors: Gudina, S.V., Arapov, Yu.G., Neverov, V.N., Savelyev, A.P., Podgornykh, S.M., Shelushinina, N.G., Yakunin, M.V.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-09-2019
• Subjects: Ballistic regime; Electron-electron interaction; Quantum wells; Ballistic regime; Quantum wells; Electron-electron interaction
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2019.04.009

We report on experimental study of quantum conductivity corrections for two-dimensional electron gas in GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature range (1.8–100) K. We perform a comparison of our experimental data for the longitudinal conductivity in zero magnetic field to the theory of interaction-induced corrections to the transport coefficients. In the temperature range from 10 K up to (45–60) K, which covers the ballistic interaction regimes for our samples, rather a good agreement between the theory and our experimental results has been found.
•Temperature dependences of resistivity for InGaAs/GaAs single and double quantum wells are analyzed.•At zero magnetic field a dielectric type of temperature dependences of resistivity occurs in a wide range of temperatures.•The exchange electron-electron interaction in a ballistic regime defines the temperature dependence of the electron mobility.•The decisive role of microscopic parameters of the samples to observe aforementioned effect is shown.