Beam test results on n +-on-n type silicon microstrip detectors before and after neutron irradiation

We present beam test results on AC-coupled, single-sided, n +-on-n type silicon microstrip detectors. We have tested the detectors before and after irradiation at a fluence of 8.3×10 13 n/cm 2, at different temperatures and bias voltages. Signal-to-noise ratio, spatial resolution, charge collection...

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Bibliographic Details
Published in:	Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 440; no. 1; pp. 136 - 150
Main Authors:	Angarano, M.M., Báder, A., Creanza, D., de Palma, M., Fiore, L., Maggi, G., My, S., Radicci, V., Raso, G., Selvaggi, G., Silvestris, L., Tempesta, P., Albergo, S., Potenza, R.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 21-01-2000
Subjects:	Capacitance Neutron irradiation Silicon detector Capacitance Neutron irradiation Silicon detector 29.40.Wk
Online Access:	Get full text
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Summary:	We present beam test results on AC-coupled, single-sided, n +-on-n type silicon microstrip detectors. We have tested the detectors before and after irradiation at a fluence of 8.3×10 13 n/cm 2, at different temperatures and bias voltages. Signal-to-noise ratio, spatial resolution, charge collection and overall efficiency have been measured.
ISSN:	0168-9002 1872-9576
DOI:	10.1016/S0168-9002(99)00866-9