Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single- and Double-Gate Operations

Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single- and Double-Gate Operations

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 46; no. 9R; p. 5686
Main Authors: Tsutsui, Gen, Hiramoto, Toshiro
Format: Journal Article
Language:English
Published: 01-09-2007
Online Access:Get full text
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Description
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.46.5686