Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices

Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices

We investigate how the existence of interface graduation can modify the electronic properties in n and p-type modulation-doped GaAs/AlxGa1−xAs single quantum wells (QWs) and superlattices. The system requires a self-consistent solution of Poisson and Schrödinger equations. Our results show that the...

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Bibliographic Details
Published in:Microelectronics Vol. 36; no. 3-6; pp. 359 - 361
Main Authors: Bezerra, M.G., Freire, J.A.K., Freire, V.N., Farias, G.A., Lima, F.M.S., Fonseca, A.L.A., Nunes, O.A.C.
Format: Journal Article
Language:English
Published: Elsevier Ltd 01-03-2005
Subjects:
Interface fluctuation
Modulation-doped
Quantum well
Superlattice
Interface fluctuation
Quantum well
Modulation-doped
Superlattice
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Summary:We investigate how the existence of interface graduation can modify the electronic properties in n and p-type modulation-doped GaAs/AlxGa1−xAs single quantum wells (QWs) and superlattices. The system requires a self-consistent solution of Poisson and Schrödinger equations. Our results show that the existence of graded interfaces modifies carrier (electrons and holes) confinement inside of the GaAs quantum well, affecting the energy levels.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2005.02.057