Numerical analysis and interpretation of the small-signal minority-carrier transport in bipolar devices

• Published in: IEEE transactions on electron devices Vol. 35; no. 2; pp. 195 - 202
• Main Authors: Park, J.-S., Neugroschel, A., Lindholm, F.A.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-02-1988; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Bipolar transistors; Capacitance; Diodes; Electronics; Exact sciences and technology; Frequency dependence; Miscellaneous; Numerical analysis; P-n junctions; Physics; Poisson equations; Propagation delay; Radiative recombination; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Minority carrier; Transit time; Charge carrier; Polycrystal; Transistor; Algorithm; Transport process; Semiconductor device; Simulation; Charge carrier recombination; Solid state device; One dimensional model; Capacitance; Bipolar technology; Silicon; P n junction; Gain
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.2440

A simple and efficient one-dimensional numerical technique is presented that determines the small-signal minority-carrier transport in the quasineutral regions of bipolar devices, such as diodes and transistors, under sinusoidal excitation. The technique is applied to study small-signal properties of p-n junction diodes and bipolar transistors. Examples treated include the frequency dependence of transistor current gain, the diffusion capacitance of a quasineutral base or emitter, and base-layer carrier propagation delay.< >