Effect of temperature & phonon scattering on the drain current of a MOSFET using SL-MoS2 as its channel material
Temperature dependence of the drain current of a MOSFET plays a crucial role in the device performance. TMDs and especially SL-MoS2 has turned out to be quite a useful material to be used in the futuristic transistors. This paper focuses on the theoretical study pertaining to the temperature variati...
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| Published in: | Superlattices and microstructures Vol. 111; pp. 912 - 921 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
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01-11-2017
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| Abstract | Temperature dependence of the drain current of a MOSFET plays a crucial role in the device performance. TMDs and especially SL-MoS2 has turned out to be quite a useful material to be used in the futuristic transistors. This paper focuses on the theoretical study pertaining to the temperature variation and its effect on the mobility and the drain current of the MOSFET using single layer MoS2 (SL- MoS2) as its channel material. The effect of temperature variation on the drain current has been inculcated using the temperature dependency of the carrier mobility. In the presented study, scattering rates have been calculated using the deformation potential approximation, considering the optical modes of phonon and polar optical phonons (as these are the dominant modes of phonon scattering in SL-MoS2). The drain current model presented in this study has been validated with the simulation data available, which ensures the overall correctness of the model. Our study shows that drain current of a MOSFET using SL-MoS2 as the channel material shows a very little variation (6.7%) with temperature variation from 300 K to 400 K. This variation gets even lower at low gate voltages due to the lower availability of carriers in the channel for scattering.
•Temperature variation of SL-MoS2 based Transistor.•Device quite robust to temperature variation.•Study shows a higher sub-threshold swing due to higher carrier density of SL-MoS2. |
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| AbstractList | Temperature dependence of the drain current of a MOSFET plays a crucial role in the device performance. TMDs and especially SL-MoS2 has turned out to be quite a useful material to be used in the futuristic transistors. This paper focuses on the theoretical study pertaining to the temperature variation and its effect on the mobility and the drain current of the MOSFET using single layer MoS2 (SL- MoS2) as its channel material. The effect of temperature variation on the drain current has been inculcated using the temperature dependency of the carrier mobility. In the presented study, scattering rates have been calculated using the deformation potential approximation, considering the optical modes of phonon and polar optical phonons (as these are the dominant modes of phonon scattering in SL-MoS2). The drain current model presented in this study has been validated with the simulation data available, which ensures the overall correctness of the model. Our study shows that drain current of a MOSFET using SL-MoS2 as the channel material shows a very little variation (6.7%) with temperature variation from 300 K to 400 K. This variation gets even lower at low gate voltages due to the lower availability of carriers in the channel for scattering.
•Temperature variation of SL-MoS2 based Transistor.•Device quite robust to temperature variation.•Study shows a higher sub-threshold swing due to higher carrier density of SL-MoS2. |
| Author | Gupta, Partha Sarathi Tiwari, Sabyasachi Dolai, Subhashish Rahaman, Hafizur |
| Author_xml | – sequence: 1 givenname: Sabyasachi surname: Tiwari fullname: Tiwari, Sabyasachi email: sabyadk@gmail.com – sequence: 2 givenname: Subhashish surname: Dolai fullname: Dolai, Subhashish – sequence: 3 givenname: Hafizur surname: Rahaman fullname: Rahaman, Hafizur – sequence: 4 givenname: Partha Sarathi surname: Gupta fullname: Gupta, Partha Sarathi |
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| Cites_doi | 10.1088/0957-4484/26/11/115202 10.1063/1.4770313 10.1063/1.4868536 10.1109/JEDS.2015.2390643 10.1088/2053-1583/2/1/015003 10.1016/0038-1101(95)00197-2 10.1038/ncomms2018 10.1063/1.4950850 10.1021/nl302015v 10.1063/1.4907697 10.1063/1.3483130 10.1038/nnano.2010.279 10.1088/0953-8984/14/11/302 10.1016/j.sse.2013.10.010 10.1103/PhysRevB.65.165401 10.1103/PhysRevB.45.3612 10.1021/nn5009148 10.1103/PhysRevB.85.115317 10.1021/nl2018178 10.1103/PhysRevB.84.155413 10.1063/1.4840175 |
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| References | Kawamura, Das Sarma (bib19) 1992; 45 Amani, Burke, Proie, Dubey (bib2) 2015; 26 Fiori, Szafranek, Iannaccone, Neumaier (bib23) 2013; 103 Kaasbjerg, Thygesen, Jacobsen (bib4) 2012; 85 Radisavljevic, Radenovic, Brivio, Giacometti, Kis (bib5) 2011; 6 Soler, Artacho, Gale, García, Junquera, Ordejón, Sánchez-Portal (bib13) 2002; 14 Shah, Amani, Chin, O'Regan, Crowne, Dubey (bib11) 2014; 91 Li, Esseni, Nahas, Jena, Xing (bib22) 2015; 3 Chang, Zhu, Akinwande (bib9) 2014; 104 Ma, Jena (bib8) 2015; 2 Shao, Zhao, Cao, Wang, Pang, Li, Deng, Zhang, Zhang, Yang, Zhang, Ren (bib24) 2016; 108 Dorgan, Bae, Pop (bib16) 2010; 97 Atomistix ToolKit Version 13.8, QuantumWise A/S Wang, Yu, Lee, Shi, Hsu, Chin, Li, Dubey, Kong, Palacios (bib3) 2012; 12 Molina-Sánchez, Wirtz (bib7) 2011; 84 Yoon, Ganapathi, Salahuddin (bib6) 2011; 11 Sengupta, Chanana, Mahapatra (bib12) 2015; 5 K. Hippalgaonkar, Y. Wang, Y. Ye, D.Y.Qiu, H. Zhu, Y. Wang, J. Moore, Louie, S.G. and Zhang, X. (no date) ‘High Thermoelectric Power Factor in Two-Dimensional Crystals of MoS . Yu, Cardona, Cardona (bib20) 2010 Sarkar, Liu, Xie, Anselmo, Mitragotri, Banerjee (bib1) 2014; 8 Kim, Konar, Hwang, Lee, Yang, Jung, Kim (bib21) 2012; 3 arXiv:1505.06779. Jiménez (bib18) 2012; 101 Brandbyge, Mozos, Ordejón, Taylor, Stokbro (bib14) 2002; 65 Lundstrom, Guo (bib17) 2005 Chen, Huang, Ma, Liu, Jeng, Ko, Hu (bib10) 1996; 39 Li (10.1016/j.spmi.2017.07.051_bib22) 2015; 3 Sengupta (10.1016/j.spmi.2017.07.051_bib12) 2015; 5 Brandbyge (10.1016/j.spmi.2017.07.051_bib14) 2002; 65 10.1016/j.spmi.2017.07.051_bib15 Yu (10.1016/j.spmi.2017.07.051_bib20) 2010 Molina-Sánchez (10.1016/j.spmi.2017.07.051_bib7) 2011; 84 Sarkar (10.1016/j.spmi.2017.07.051_bib1) 2014; 8 Soler (10.1016/j.spmi.2017.07.051_bib13) 2002; 14 Ma (10.1016/j.spmi.2017.07.051_bib8) 2015; 2 Kawamura (10.1016/j.spmi.2017.07.051_bib19) 1992; 45 Fiori (10.1016/j.spmi.2017.07.051_bib23) 2013; 103 Shao (10.1016/j.spmi.2017.07.051_bib24) 2016; 108 Chen (10.1016/j.spmi.2017.07.051_bib10) 1996; 39 10.1016/j.spmi.2017.07.051_bib25 Amani (10.1016/j.spmi.2017.07.051_bib2) 2015; 26 Yoon (10.1016/j.spmi.2017.07.051_bib6) 2011; 11 Shah (10.1016/j.spmi.2017.07.051_bib11) 2014; 91 Lundstrom (10.1016/j.spmi.2017.07.051_bib17) 2005 Chang (10.1016/j.spmi.2017.07.051_bib9) 2014; 104 Kaasbjerg (10.1016/j.spmi.2017.07.051_bib4) 2012; 85 Wang (10.1016/j.spmi.2017.07.051_bib3) 2012; 12 Radisavljevic (10.1016/j.spmi.2017.07.051_bib5) 2011; 6 Dorgan (10.1016/j.spmi.2017.07.051_bib16) 2010; 97 Kim (10.1016/j.spmi.2017.07.051_bib21) 2012; 3 Jiménez (10.1016/j.spmi.2017.07.051_bib18) 2012; 101 |
| References_xml | – volume: 85 year: 2012 ident: bib4 article-title: Phonon-limited mobility in n -type single-layer moS 2 from first principles publication-title: Phys. Rev. B contributor: fullname: Jacobsen – volume: 84 year: 2011 ident: bib7 article-title: Phonons in single-layer and few-layer moS 2 and WS 2 publication-title: Phys. Rev. B contributor: fullname: Wirtz – volume: 91 start-page: 87 year: 2014 end-page: 90 ident: bib11 article-title: Analysis of temperature dependent hysteresis in MoS publication-title: Solid-State Electron. contributor: fullname: Dubey – year: 2005 ident: bib17 article-title: Nanoscale Transistors: Device Physics, Modeling and Simulation contributor: fullname: Guo – volume: 11 start-page: 3768 year: 2011 end-page: 3773 ident: bib6 article-title: How good can Monolayer MoS publication-title: Nano Lett. contributor: fullname: Salahuddin – volume: 65 start-page: 165401 year: 2002 ident: bib14 publication-title: Phys. Rev. B contributor: fullname: Stokbro – volume: 14 start-page: 2745 year: 2002 ident: bib13 publication-title: J. Phys. Condens. Matter contributor: fullname: Sánchez-Portal – volume: 2 start-page: 015003 year: 2015 ident: bib8 article-title: Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors publication-title: 2D Mater. contributor: fullname: Jena – volume: 104 start-page: 113504 year: 2014 ident: bib9 article-title: On the mobility and contact resistance evaluation for transistors based on MoS publication-title: Appl. Phys. Lett. contributor: fullname: Akinwande – volume: 97 start-page: 082112 year: 2010 ident: bib16 article-title: Mobility and saturation velocity in graphene on SiO publication-title: Appl. Phys. Lett. contributor: fullname: Pop – volume: 3 start-page: 1011 year: 2012 ident: bib21 article-title: High-mobility and low-power thin-film transistors based on multilayer MoS publication-title: Nat. Commun. contributor: fullname: Kim – volume: 12 start-page: 4674 year: 2012 end-page: 4680 ident: bib3 article-title: Integrated circuits based on Bilayer MoS publication-title: Nano Lett. contributor: fullname: Palacios – volume: 103 start-page: 233509 year: 2013 ident: bib23 article-title: Velocity saturation in few-layer MoS publication-title: Appl. Phys. Lett. contributor: fullname: Neumaier – volume: 8 start-page: 3992 year: 2014 end-page: 4003 ident: bib1 article-title: MoS 2 field-effect transistor for next-generation label-free Biosensors publication-title: ACS Nano contributor: fullname: Banerjee – volume: 39 start-page: 699 year: 1996 end-page: 701 ident: bib10 article-title: Temperature effects on MOSFET driving capability and voltage gain publication-title: Solid-State Electron. contributor: fullname: Hu – volume: 6 start-page: 147 year: 2011 end-page: 150 ident: bib5 article-title: Single-layer MoS publication-title: Nat. Nanotechnol. contributor: fullname: Kis – volume: 101 start-page: 243501 year: 2012 ident: bib18 article-title: Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors publication-title: Appl. Phys. Lett. contributor: fullname: Jiménez – volume: 3 start-page: 200 year: 2015 end-page: 207 ident: bib22 article-title: Two-Dimensional Heterojunction interlayer Tunneling field effect transistors (Thin-TFETs) publication-title: IEEE J. Electron Dev. Soc. contributor: fullname: Xing – volume: 5 start-page: 027101 year: 2015 ident: bib12 article-title: Phonon scattering limited performance of monolayer MoS publication-title: AIP Adv. contributor: fullname: Mahapatra – volume: 45 start-page: 3612 year: 1992 end-page: 3627 ident: bib19 article-title: Phonon-scattering-limited electron mobilities inAlxGa1−xAs/GaAs heterojunctions publication-title: Phys. Rev. B contributor: fullname: Das Sarma – year: 2010 ident: bib20 article-title: Fundamentals of Semiconductors: Physics and Materials Properties contributor: fullname: Cardona – volume: 26 start-page: 115202 year: 2015 ident: bib2 article-title: Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS publication-title: Nanotechnology contributor: fullname: Dubey – volume: 108 start-page: 203105 year: 2016 ident: bib24 article-title: Enhancement of carrier mobility in MoS publication-title: Appl. Phys. Lett. contributor: fullname: Ren – volume: 26 start-page: 115202 issue: 11 year: 2015 ident: 10.1016/j.spmi.2017.07.051_bib2 article-title: Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene publication-title: Nanotechnology doi: 10.1088/0957-4484/26/11/115202 contributor: fullname: Amani – volume: 101 start-page: 243501 issue: 24 year: 2012 ident: 10.1016/j.spmi.2017.07.051_bib18 article-title: Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors publication-title: Appl. Phys. Lett. doi: 10.1063/1.4770313 contributor: fullname: Jiménez – volume: 104 start-page: 113504 issue: 11 year: 2014 ident: 10.1016/j.spmi.2017.07.051_bib9 article-title: On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals publication-title: Appl. Phys. Lett. doi: 10.1063/1.4868536 contributor: fullname: Chang – volume: 3 start-page: 200 issue: 3 year: 2015 ident: 10.1016/j.spmi.2017.07.051_bib22 article-title: Two-Dimensional Heterojunction interlayer Tunneling field effect transistors (Thin-TFETs) publication-title: IEEE J. Electron Dev. Soc. doi: 10.1109/JEDS.2015.2390643 contributor: fullname: Li – volume: 2 start-page: 015003 issue: 1 year: 2015 ident: 10.1016/j.spmi.2017.07.051_bib8 article-title: Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors publication-title: 2D Mater. doi: 10.1088/2053-1583/2/1/015003 contributor: fullname: Ma – volume: 39 start-page: 699 issue: 5 year: 1996 ident: 10.1016/j.spmi.2017.07.051_bib10 article-title: Temperature effects on MOSFET driving capability and voltage gain publication-title: Solid-State Electron. doi: 10.1016/0038-1101(95)00197-2 contributor: fullname: Chen – year: 2010 ident: 10.1016/j.spmi.2017.07.051_bib20 contributor: fullname: Yu – volume: 3 start-page: 1011 year: 2012 ident: 10.1016/j.spmi.2017.07.051_bib21 article-title: High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals publication-title: Nat. Commun. doi: 10.1038/ncomms2018 contributor: fullname: Kim – volume: 108 start-page: 203105 issue: 20 year: 2016 ident: 10.1016/j.spmi.2017.07.051_bib24 article-title: Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer publication-title: Appl. Phys. Lett. doi: 10.1063/1.4950850 contributor: fullname: Shao – ident: 10.1016/j.spmi.2017.07.051_bib25 – volume: 12 start-page: 4674 issue: 9 year: 2012 ident: 10.1016/j.spmi.2017.07.051_bib3 article-title: Integrated circuits based on Bilayer MoS2Transistors publication-title: Nano Lett. doi: 10.1021/nl302015v contributor: fullname: Wang – volume: 5 start-page: 027101 issue: 2 year: 2015 ident: 10.1016/j.spmi.2017.07.051_bib12 article-title: Phonon scattering limited performance of monolayer MoS2 and WSe2 n-mOSFET publication-title: AIP Adv. doi: 10.1063/1.4907697 contributor: fullname: Sengupta – volume: 97 start-page: 082112 issue: 8 year: 2010 ident: 10.1016/j.spmi.2017.07.051_bib16 article-title: Mobility and saturation velocity in graphene on SiO2 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3483130 contributor: fullname: Dorgan – volume: 6 start-page: 147 issue: 3 year: 2011 ident: 10.1016/j.spmi.2017.07.051_bib5 article-title: Single-layer MoS2 transistors publication-title: Nat. Nanotechnol. doi: 10.1038/nnano.2010.279 contributor: fullname: Radisavljevic – volume: 14 start-page: 2745 year: 2002 ident: 10.1016/j.spmi.2017.07.051_bib13 publication-title: J. Phys. Condens. Matter doi: 10.1088/0953-8984/14/11/302 contributor: fullname: Soler – volume: 91 start-page: 87 year: 2014 ident: 10.1016/j.spmi.2017.07.051_bib11 article-title: Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications publication-title: Solid-State Electron. doi: 10.1016/j.sse.2013.10.010 contributor: fullname: Shah – volume: 65 start-page: 165401 year: 2002 ident: 10.1016/j.spmi.2017.07.051_bib14 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.65.165401 contributor: fullname: Brandbyge – volume: 45 start-page: 3612 issue: 7 year: 1992 ident: 10.1016/j.spmi.2017.07.051_bib19 article-title: Phonon-scattering-limited electron mobilities inAlxGa1−xAs/GaAs heterojunctions publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.45.3612 contributor: fullname: Kawamura – volume: 8 start-page: 3992 issue: 4 year: 2014 ident: 10.1016/j.spmi.2017.07.051_bib1 article-title: MoS 2 field-effect transistor for next-generation label-free Biosensors publication-title: ACS Nano doi: 10.1021/nn5009148 contributor: fullname: Sarkar – ident: 10.1016/j.spmi.2017.07.051_bib15 – volume: 85 issue: 11 year: 2012 ident: 10.1016/j.spmi.2017.07.051_bib4 article-title: Phonon-limited mobility in n -type single-layer moS 2 from first principles publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.85.115317 contributor: fullname: Kaasbjerg – volume: 11 start-page: 3768 issue: 9 year: 2011 ident: 10.1016/j.spmi.2017.07.051_bib6 article-title: How good can Monolayer MoS2Transistors be? publication-title: Nano Lett. doi: 10.1021/nl2018178 contributor: fullname: Yoon – volume: 84 issue: 15 year: 2011 ident: 10.1016/j.spmi.2017.07.051_bib7 article-title: Phonons in single-layer and few-layer moS 2 and WS 2 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.84.155413 contributor: fullname: Molina-Sánchez – volume: 103 start-page: 233509 issue: 23 year: 2013 ident: 10.1016/j.spmi.2017.07.051_bib23 article-title: Velocity saturation in few-layer MoS2 transistor publication-title: Appl. Phys. Lett. doi: 10.1063/1.4840175 contributor: fullname: Fiori – year: 2005 ident: 10.1016/j.spmi.2017.07.051_bib17 contributor: fullname: Lundstrom |
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