Effect of temperature & phonon scattering on the drain current of a MOSFET using SL-MoS2 as its channel material

• Published in: Superlattices and microstructures Vol. 111; pp. 912 - 921
• Main Authors: Tiwari, Sabyasachi, Dolai, Subhashish, Rahaman, Hafizur, Gupta, Partha Sarathi
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-11-2017
• Subjects: 2D materials; Phonon limited current; SL-MoS2; SL-MoS2 FET; SL-MoS2; SL-MoS2 FET; Phonon limited current; 2D materials
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2017.07.051

Temperature dependence of the drain current of a MOSFET plays a crucial role in the device performance. TMDs and especially SL-MoS2 has turned out to be quite a useful material to be used in the futuristic transistors. This paper focuses on the theoretical study pertaining to the temperature variation and its effect on the mobility and the drain current of the MOSFET using single layer MoS2 (SL- MoS2) as its channel material. The effect of temperature variation on the drain current has been inculcated using the temperature dependency of the carrier mobility. In the presented study, scattering rates have been calculated using the deformation potential approximation, considering the optical modes of phonon and polar optical phonons (as these are the dominant modes of phonon scattering in SL-MoS2). The drain current model presented in this study has been validated with the simulation data available, which ensures the overall correctness of the model. Our study shows that drain current of a MOSFET using SL-MoS2 as the channel material shows a very little variation (6.7%) with temperature variation from 300 K to 400 K. This variation gets even lower at low gate voltages due to the lower availability of carriers in the channel for scattering.
•Temperature variation of SL-MoS2 based Transistor.•Device quite robust to temperature variation.•Study shows a higher sub-threshold swing due to higher carrier density of SL-MoS2.