Morphological and microwave dielectric properties of Bi:SrMoO4 ceramic

• Published in: Journal of solid state chemistry Vol. 316; p. 123555
• Main Authors: Mikhaylovskaya, Zoya A., Buyanova, Elena S., Malkin, Alexander I., Korotkov, Alexey N., Knyazev, Nikolay S., Petrova, Sofia A.
• Format: Journal Article
• Language: English
• Published: Elsevier Inc 01-12-2022
• Subjects: Bismuth oxide; Dilatometry; Microwave dielectrics; Strontium molybdate; Dilatometry; Strontium molybdate; Bismuth oxide; Microwave dielectrics
• ISSN: 0022-4596; 1095-726X
• DOI: 10.1016/j.jssc.2022.123555

The Bi:SrMoO4 ceramic samples were prepared from Sr1-1.5xBixØ0.5xMoO4 (x ​= 0.05–0.45) powders. Complex oxides with 0.05 ​= ​x ​≤ 0.25 crystallize with SrMoO4- type tetragonal structure, complex oxides with 0.25 < x ​< 0.4 show superstructural ordering. Scanning electron microscopy confirmed that all powder samples were single-phase, the significant growth of grains of ceramic with sintering temperature was detected. The thermal expansion coefficients calculated from high temperature X-ray diffraction data and dilatometry indicated the increase of the thermal expansion coefficients of Bi:SrMoO4 with increase of bismuth content and the preferred orientation of grains along a and b dimensions in sintered of ceramic samples. The electrodynamic characteristics of the Bi:SrMoO4 ceramic samples were studied. The effective value of the permittivity increases with increasing bismuth concentration. It was detected that the formation of dense ceramics with directly orientated grains results the appearance of significant resonance peak in the S11 and S21 spectra.
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•The Bi:SrMoO4 ceramic samples were prepared from Sr1-1.5xBix0.5xMoO4.•2. Thermal expansion coefficients of Bi:SrMoO4 increased with bismuth content.•The formation of dense ceramics with directly orientated grains was observed.•The effective value of the permittivity of Bi:SrMoO4 increased with bismuth content.•Significant resonance peaks in S11 and S21 spectra were detected for dense ceramics.