Dislocation-induced electronic levels in semi-insulated CdTe

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 633; pp. S81 - S82
• Main Authors: Babentsov, V., Boiko, V., Schepelskii, G.A., James, R.B., Franc, J., Procházka, J., Hlídek, P.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-05-2011
• Subjects: CdTe; Detectors; Dislocations; CdTe; Detectors; Dislocations
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/j.nima.2010.06.129

We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL) and compared our data with earlier results. We confirmed the direct correlation between Y-emission and dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density <2×10
5
cm
−2). Plastic deformation also increased the concentrations of grown-in defects, namely, those of an important midgap level
E
C−0.74
eV in CdTe and Cd
1−
x
Zn
x
Te (
x<0.1), the materials of choice in today’s detector technology. Our findings demonstrate that dislocation-induced defects can degrade charge collection in radiation detectors.