Study of the optical properties of Sb2(Se1-xSx)3 (x = 0–1) solid solutions

• Published in: Materials science in semiconductor processing Vol. 144; p. 106571
• Main Authors: Uslu, Mehmet Ender, Kondrotas, Rokas, Nedzinskas, Ramūnas, Volobujeva, Olga, Timmo, Kristi, Kauk-Kuusik, Marit, Krustok, Jüri, Grossberg, Maarja
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 15-06-2022
• Subjects: Deep donor-deep acceptor pairs; Electron phonon interaction; Excitons; Photoluminescence; Sb2(Se1-xSx)3; Sb2(Se1-xSx)3; Deep donor-deep acceptor pairs; Excitons; Electron phonon interaction; Photoluminescence
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2022.106571

This study presents a detailed analysis of the optical properties of the Sb2(Se1-xSx)3 (x = 0–1) polycrystals. Four antimony selenosulfide solid solutions Sb2(Se1-xSx)3 together with Sb2Se3 and Sb2S3 were synthesized from elemental precursors at the same synthesis conditions, only varying the x = S/(Se + S) value with a step of Δx = 0.2. Successful formation of the Sb2(Se1-xSx)3 solid solutions was determined by Raman spectroscopy and X-ray diffraction. As expected for the same type of crystal structure of Sb2Se3 and Sb2S3, the bimodal behavior of Ag Raman mode in Sb2(Se1-xSx)3 was detected. Temperature and excitation power dependent photoluminescence (PL) analysis of Sb2(Se1-xSx)3 was performed in order to look into the electronic and defect structure of these promising semiconductor materials for optoelectronic applications. The shift of the near band edge PL emission in Sb2(Se1-xSx)3 towards higher energies from 1.309 eV to 1.728 eV with increasing sulfur content was detected at T = 3 K. A change in the radiative recombination mechanism was detected being of excitonic origin in samples with x ≤ 0.2 and resulting from deep donor-deep acceptor pair recombination in samples with x > 0.2.