Ion beam induced structural and electrical modifications of Fe doped molybdenum oxide thin films

• Published in: Materials science in semiconductor processing Vol. 31; pp. 593 - 598
• Main Authors: Vats, P., Chauhan, D., Patra, A.K., Gupta, V.P., Alimuddin
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-03-2015
• Subjects: Molybdenum oxide; Raman spectroscopy; Resistivity; Swift-heavy ion irradiation; X-ray diffraction; X-ray diffraction; Molybdenum oxide; Raman spectroscopy; Swift-heavy ion irradiation; Resistivity
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2014.12.041

In the present paper, structural and electrical properties of 2% Fe doped molybdenum oxide thin films grown by the pulsed laser deposition (PLD) technique have been reported. Ion beam induced modifications of these films were studied under the bombardment of 100MeV Ni8+ ions. X-ray diffraction (XRD), Fourier transform infrared spectroscopy, and micro-Raman measurements suggested the formation of mainly orthorhombic (α-phase) MoO3 in the films along with the presence of monoclinic (β-phase) MoO3 and MoO2. Ion bombardment induced structural disorder in the MoO3 films. Room temperature resistivity of the as-grown film was 13.85Ω-cm. The resistivity increased with increasing ion fluence (ϕ), and the values were found to be 47.6Ω-cm, 73.7Ω-cm, and 101.6Ω-cm for ϕ=1×1012, 1×1013, and 1×1014 ions-cm−2, respectively.