The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy

The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy

Primary defects introduced in boron-doped silicon by an alpha-particle source with a fluence rate of 7 × 106 cm−2 s−1 at cryogenic temperatures were investigated using deep-level transient spectroscopy (DLTS). The data showed that the defects observed between 35 K and 120 K were not detectable when...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 442; pp. 28 - 30
Main Authors: Danga, H.T., Tunhuma, S.M., Auret, F.D., Igumbor, E., Omotoso, E., Meyer, W.E.
Format: Journal Article
Language:English
Published: Elsevier B.V 01-03-2019
Subjects:
DLTS
Irradiation
Silicon
Vacancy
Irradiation
Silicon
Vacancy
DLTS
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Summary:Primary defects introduced in boron-doped silicon by an alpha-particle source with a fluence rate of 7 × 106 cm−2 s−1 at cryogenic temperatures were investigated using deep-level transient spectroscopy (DLTS). The data showed that the defects observed between 35 K and 120 K were not detectable when irradiation was carried out at room temperature. The defect levels were observed at 0.10 eV, 0.14 eV and 0.18 eV above the valence band maximum. These levels were attributed to the boron-substitutional vacancy complex, the mono vacancy and a vacancy-related defect respectively.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2019.01.015